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Syllabus for

Academic year
MCC086 - Microelectronics
 
Syllabus adopted 2015-02-11 by Head of Programme (or corresponding)
Owner: TKELT
7,5 Credits
Grading: TH - Five, Four, Three, Not passed
Education cycle: First-cycle
Major subject: Electrical Engineering
Department: 59 - MICROTECHNOLOGY AND NANOSCIENCE

The current course round has limited places. Please contact the student center if you are not able to add the course to your selection.
Teaching language: Swedish
Block schedule: A

Course module   Credit distribution   Examination dates
Sp1 Sp2 Sp3 Sp4 Summer course No Sp
0111 Examination 3,0 c Grading: TH   3,0 c   26 Oct 2015 am V,  04 Jan 2016 am H,  15 Aug 2016 am M
0211 Project 3,0 c Grading: TH   3,0 c    
0311 Written and oral assignments 1,5 c Grading: UG   1,5 c    

In programs

MPEES EMBEDDED ELECTRONIC SYSTEM DESIGN, MSC PROGR, Year 2 (elective)
TKELT ELECTRICAL ENGINEERING, Year 3 (compulsory)

Examiner:

Bitr professor  Kjell Jeppson
Docent  Per Lundgren


Replaces

ETI145   Microelectronic devices and circuits MCC085   Microelectronics


Eligibility:

In order to be eligible for a first cycle course the applicant needs to fulfil the general and specific entry requirements of the programme(s) that has the course included in the study programme.

Course specific prerequisites

Physics (FFY401 and FFY143), Circuit Analysis (EMI083, EMI084), Electronics (ETI146), Electromagnetism (EEM015) and Calculus in one variable (TMV136)

Aim

The course is an introduction to physical modelling of semiconductor devices. The main purpose is twofold: first, the participants should develop and demonstrate the ability to make use of their knowledge of physics and electrical circuit theory to explain the electrical characteristics for various important semiconductor devices, and second, they should be able to independently use basic semiconductor physics to successfully address technical problems involving semiconductor devices.

Learning outcomes (after completion of the course the student should be able to)

show sufficient familiarity with basic semiconductor concepts and relationships to identify their applicability for making reasonable inferences in simple, previously unfamiliar problems

make reasonable assumptions and simplifications in novel, realistic problems concerning semiconductor devices to obtain quantitatively reasonable results using reference literature

conduct electrical measurements (with time restrictions in a measurement lab) on diodes and transistors and use the resulting data to extract model parameters for both first and second order effects

orally describe the procedure for determining manufacturing relevant parameters in diode and transistor models

illustrate the consistency between model and measurement data by plotting in Excel or MATLAB

reason in a constructively simplified manner about fundamental dependencies of the current limiting mechanisms in semiconductor devices (e. g. apply 'straight-line physics'), where special emphasis is put on modeling with regards to manufacturing-related parameters
It is also possible that one could:
describe the main steps in the fabrication process of semiconductor devices and integrated circuits
Basic concepts and relationships :
energy band diagrams, denisty of state, distribution functions, temperature, recombination, generation, doping, law of mass action, conductivity, mobility, drift , diffusion, Einstein's relationship, velocity saturation, depletion approximation, depletion capacitance, built-in voltage, ideal diode equation, avalanche and zenerbreakdown, threshold voltage, saturation, gradual channelapproximation, substrate effect, drain induced
barrier lowering, mobility roll-off , channel length- and basewidth modulation, cut-off frequency
Semiconductor devices include:
resistors, thermistors
rectifier diodes, varactors, solar cells, light-emitting diodes
field effect transistors ( MOSFETs) , bipolar transistors

Content

Basic semiconductor properties (repetition of expected knowledge from physics courses) :
        
Intrinsic / extrinsic semiconductors , doping, impurities
(donors / acceptors ); charge carriers : holes and electrons , majority
and minority carriers; mobility (mobility), conductivity.
        
Band theory, Fermi - Dirac distribution function and the concept fermipotential .
        
Egentäthetens and mobility temperature dependence.
    
pn junction (repetition of the expected prior knowledge of electronics courses) :
        
Ideal Diode , piecewise linear diode model ( contact potential and series resistance ) ,
        
Simple diode circuits with diode rectifier,
        
ideal diode equation , ideality factor , småsignalmodell , dynamic resistance.
    
pn junction (new material):
        
methods for extracting model parameters from measurements on the diodes,
        
contact potential, the balance between diffusion and operating currents ,
        
band diagram , the law of the junction , lågnivåinjektion of minority carrier diffusion length ,
        
depletion layer ( barrier layer ) , breakthrough mechanisms ,
        
diode as nonlinear capacitance, Gauss' law , plattkondensatorn ,
        
minoritetsbärarupplagring and diode transient .
    
pn junction in applications :
        
varactors , photodiodes , solar cells and LEDs.
    
MOS transistor (repetition of the expected prior knowledge of electronics courses) :
        
MOS transistor voltage-controlled resistance and power source.
        
Piecewise linear model and Shockley quadratic power model.
        
Output and transfer characteristics .
        
The difference between large and small signal
        
Simple MOS amplifier circuits . Simple digital CMOS circuits.
    
The MOS transistor ( new material ) :
        Methods for the extraction of model parameters from measured data, "straight-line physics" least squares fit .
        MOS capacitance, accumulation, depletion, and inversion. Gauss law
        Connecting of series connected capacitors.
        MOS transistor band diagram. The theory behind the current model in strong inversion. Gradual channel approximation.
        
Power Model in weak inversion. Subtröskelströmmar.
        
Second order effects:
            
velocity saturation,
            
mobility roll-off,
            
draininducerad barrier lowering (DIBL),
            
body effect,
            
kanallängdsmodulation, Early voltage .
    
Plotting charts and graphs in Matlab and/or Excel.
    
Bipolar Transistor :
        
Fundamental function and structure
        
Energy band diagram
        
Current amplification
       
Cut-off frequency
    
Emphasis on engineering skills and dimensional analysis in calculations .
    
Emerging Technology. Nanoelectronics .
    
Manufacturing technology for CMOS integrated circuits

Organisation

The course is based on a project linked to an early written assignment and a lab assignment. The project work is carried out in groups of two. The two parts of the project itself (diode amd MOSFET) are presented orally based on written hand-ins and are graded. At the end of the course there is a written exam. During the course, aid is provided in the form of scheduled tutorials, exercises and lectures. For each part of the course there is a diagnostic self-test on the course website.
The first two weeks cover basic semiconductor properties as conductivity and fermi statistics in a traditional way. Measurements on diodes and transistors are conducted to collect data for the project.
Study week three and four are devoted to the diode portion of the
project, and during study week five and six the focus is on the MOSFET
project part.
Study week seven and eight deal with alternative transistor structures such as bipolar transistors and novel materials from topical research and also give room for repetition.

Literature

Kjell Jeppson: Kurshäfte i Mikroelektronik, 2012

Donald A. Neamen: Semiconductor Physics and Devices , McGraw-Hill (2012)



Alternative options are for example:

Robert F. Pierret: Semiconductor Device Fundamentals, Prentice Hall (1996)

book cover

Ben G. Streetman, Solid State Electronic Devices, Pearson (2010)

Examination

The course consists of three modules that are examined separately. The final grade is calculated by weighing the rating of the project and the score on the exam.
The written exam consists of two parts. In the first part no aids are allowed. It consists of two assignments. The first one comprises four sub-problems that represent various fundamental aspects of the course. These sub-problems must be adequately treated to pass, and for the rest of the exam to be assessed. The second assignment deals with manufacturing technology. The second part contains three problems that can be solved with the course booklet, course book, a collection of formulas and a sheet of your own notes as permitted aids.


Page manager Published: Thu 04 Feb 2021.