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Graduate courses

Departments' graduate courses for PhD-students.


Syllabus for

Academic year
ETI145 - Microelectronic devices and circuits
Owner: TELTA
8,0 Credits (ECTS 12)
Grading: TH - Five, Four, Three, Not passed
Level: B

Teaching language: Swedish

Course module   Credit distribution   Examination dates
Sp1 Sp2 Sp3 Sp4 No Sp
0197 Examination 3,0 c Grading: TH   3,0 c   07 Jan 2006 pm V,  04 Mar 2006 am V,  31 Aug 2006 pm V
0297 Laboratory 1,5 c Grading: UG   0,5 c 1,0 c    
0397 Examination 3,5 c Grading: TH   3,5 c   30 May 2006 am M,  30 Aug 2006 am V

In programs



Professor  Bo Håkansson


For single subject courses within Chalmers programmes the same eligibility requirements apply, as to the programme(s) that the course is part of.

Course specific prerequisites

Comming later!


The course gives the participant an opportunity to familiarize with the subject of semiconductor devices and to train relevant skills for a future engineering career. Passing the course means being able to understand and use the standard models for diodes and transistors in novel, realistic circumstances.


The course is designed to promote the quest for understanding. It is a substantial challenge to grasp the
device models in such a way that you can pass on this knowledge to others in the future, but to feel
that you accomplish this is meant to be a stimulating reward for your efforts.

Traing of general skills:
Reasoning qualitatively about physical models.
Turning open assignments into concrete problems to solve.
Deliver results orally.

Topical goals:
Being able to explain how a diode and transitor works for a future colleague.
Make own conclusions about simple, realistic problem situations concerning semiconductor devices.
Being able to explain and model the conductivity of semiconductors with regards to parameters like
band gap, doping and temperature.
Being able to electrically characterize diodes and transistors.
Understand the common current-voltage and circuit models for diodes and transistors.
Understand the CMOS inverter.


In the first part (Part A) of the course physical concepts and models of semiconductors are presented. In particular the pn-junction is studied. Diodes and transistors of bipolar as well as Metall Oxid Semiconductor types are investigated.
In the seconed part (Part B) analysis and synthesis of electronic circuits are made. The circuits are composed of both passaive and active components. Appropriate models of operational amplifiers, diod and transistors are developed. Static and dynamic behaviour of the circuits are studied.


Part A:
R. F. Pierret, Semiconductor Device Fundamentals and some copy material or e g K. O. Jeppson, Halvledarteknik.

Part B:
Sedra & Smith, Microelectronic Circuits, 5th edition.
Copy material: Course-desciption, Laboratory material, Passive components and some lecturing and excercise material.


Each part of the course is ended by a written exam. The final grade is determined from the average result in the two exams. To receive the final grade both exams and the laboratory course must be passed.

Page manager Published: Thu 04 Feb 2021.