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Graduate courses

Departments' graduate courses for PhD-students.

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Syllabus for

Academic year
MCC085 - Microelectronics
 
Syllabus adopted 2010-02-22 by Head of Programme (or corresponding)
Owner: TKELT
7,5 Credits
Grading: TH - Five, Four, Three, Not passed
Education cycle: First-cycle
Major subject: Electrical Engineering
Department: 59 - MICROTECHNOLOGY AND NANOSCIENCE


Teaching language: Swedish

Course module   Credit distribution   Examination dates
Sp1 Sp2 Sp3 Sp4 Summer course
0107 Laboratory 1,0 c Grading: UG   1,0 c    
0207 Examination 5,5 c Grading: TH   5,5 c   23 Oct 2010 pm M,  13 Jan 2011 pm M,  26 Aug 2011 pm V
0307 Project 1,0 c Grading: UG   1,0 c    

In programs

TKELT ELECTRICAL ENGINEERING, Year 3 (compulsory)

Examiner:

Bitr professor  Kjell Jeppson
Docent  Per Lundgren


Replaces

ETI145   Microelectronic devices and circuits

Course evaluation:

http://document.chalmers.se/doc/153622401


  Go to Course Homepage

Eligibility:

For single subject courses within Chalmers programmes the same eligibility requirements apply, as to the programme(s) that the course is part of.

Course specific prerequisites

Physics (FFY401 and FFY143), Circuit Analysis (EMI083), Electronics (ETI146), Electromagnetism (EEM015) and Calculus in one variable (TMV136)

Aim

To give the participants an opportunity to familiarize with the subject of semiconductor devices and to train relevant skills for a future engineering career.

Learning outcomes (after completion of the course the student should be able to)

· understand and use the standard models for diodes and transistors in novel, realistic circumstances,
· explain how a diode and transistor works for a future colleague,
· draw own conclusions about simple, realistic problem situations concerning semiconductor devices,
· explain and model the conductivity of semiconductors with regards to parameters like band gap, doping and temperature,
· reason qualitatively about physical models, turn open assignments into concrete problems to solve, and deliver results orally.

Content

Semiconductor fundamentals: conductivity/resistivity, intrinsic/extrinsic properties, doping of impurities (donors/acceptors), majority/minority charge carriers, mobility, band-gap, Fermi-Dirac distribution function, Fermi potential, temperature dependence.

pn-junctions: the diode as a circuit element, piecewise linear diode models, built-in contact potential, series resistance, ideal diode equation, ideality factor, current-limiting mechanisms, depletion regions, breakdown mechanisms, capacitances and capacitive properties, switching properties.

MOS Field-Effect Transistor: simple switch model, voltage-controlled resistor/current-source, piecewise linear models, output and transfer characteristics. Simple MOSFET circuits. Gradual channel approximation. Band diagrams. Second-order effects: subthreshold currents, channel length modulation (CLM), velocity saturation, mobility roll-off.

Diffusion and recombination. Continuity equation. Diffusion equation. Diffusion limited current.

Bipolar junction transistor (BJT): transport current, transport transistor model, diffusion, charge storage, base width modulation, small signal model.

Organisation

Traditional course with lectures and class exercises. Diode measurements project via internet and written reports. MOSFET hands-on laboratory. Home assignments with compulsary hand-ins. Piece-wise linear modelling in studio environment.

Literature

Kjell Jeppson: Kurshäfte i Mikroelektronik, 2009

eller
Robert F. Pierret: Semiconductor Device Fundamentals
Prentice Hall (1996)
book cover

Examination

The course is divid into three parts that are examined individually. Final grad will be determined by the written examination.

The written examination consists of two parts. The first part ("theory") includes four basic questions covering the four main parts of the course (semiconductors, pn-junctions, MOSFETs, BJTs). At least three of these must be correctly answered for a pass and for a review of the second part part. No books allowed for the first part.

The second part ("problems" consists of three problems to be solved (book and formulas allowed). The requirements to pass are at least three points (out of four) for one problem solution or four points for two problem solutions. In total 8 points out of 18 are required.


Page manager Published: Thu 04 Feb 2021.