Syllabus for |
|
| MCC085 - Microelectronics |
| |
| Syllabus adopted 2008-02-23 by Head of Programme (or corresponding) |
| Owner: TKELT |
|
|
7,5 Credits |
| Grading: TH - Five, Four, Three, Not passed |
| Education cycle: First-cycle |
|
Major subject: Electrical Engineering
|
|
Department: 59 - MICROTECHNOLOGY AND NANOSCIENCE
|
Teaching language: Swedish
| Course module |
|
Credit distribution |
|
Examination dates |
|
Sp1 |
Sp2 |
Sp3 |
Sp4 |
|
No Sp |
| 0107 |
Laboratory |
1,0 c |
Grading: UG |
|
1,0 c
|
|
|
|
|
|
|
|
| 0207 |
Examination |
5,5 c |
Grading: TH |
|
5,5 c
|
|
|
|
|
|
|
25 Oct 2008 am H, |
15 Jan 2009 pm V, |
28 Aug 2009 pm V |
| 0307 |
Project |
1,0 c |
Grading: UG |
|
1,0 c
|
|
|
|
|
|
|
|
In programs
TKELT ELECTRICAL ENGINEERING, Year 3 (compulsory)
Examiner:
Bitr professor
Kjell Jeppson
Docent
Per Lundgren
Replaces
ETI145
Microelectronic devices and circuits
Course evaluation:
http://document.chalmers.se/doc/119988923
Eligibility:
For single subject courses within Chalmers programmes the same eligibility requirements apply, as to the programme(s) that the course is part of.
Aim
To give the participants an opportunity to familiarize with the subject of semiconductor devices and to train relevant skills for a future engineering career.
Learning outcomes (after completion of the course the student should be able to)
· understand and use the standard models for diodes and transistors in novel, realistic circumstances,
· explain how a diode and transistor works for a future colleague,
· draw own conclusions about simple, realistic problem situations concerning semiconductor devices,
· explain and model the conductivity of semiconductors with regards to parameters like band gap, doping and temperature,
· reason qualitatively about physical models, turn open assignments into concrete problems to solve, and deliver results orally.
Content
Semiconductor fundamentals: conductivity/resistivity, intrinsic/extrinsic properties, doping of impurities (donors/acceptors), majority/minority charge carriers, mobility, band-gap, Fermi-Dirac distribution function, Fermi potential, temperature dependence.
pn-junctions: the diode as a circuit element, piecewise linear diode models, built-in contact potential, series resistance, ideal diode equation, ideality factor, current-limiting mechanisms, depletion regions, breakdown mechanisms, capacitances and capacitive properties, switching properties.
MOS Field-Effect Transistor: simple switch model, voltage-controlled resistor/current-source, piecewise linear models, output and transfer characteristics. Simple MOSFET circuits. Gradual channel approximation. Band diagrams. Second-order effects: subthreshold currents, channel length modulation (CLM), velocity saturation, mobility roll-off.
Diffusion and recombination. Continuity equation. Diffusion equation. Diffusion limited current.
Bipolar junction transistor (BJT): transport current, transport transistor model, base width modulation, small signal model.
Organisation
Traditional course with lectures and class exercises. Diode measurements project via internet and written reports. MOSFET hands-on laboratory. Home assignments with compulsary hand-ins. Piece-wise linear modelling in studio environment.
Literature
Behzad Razavi: Fundamentals of Microelectronics, 1st Edition ISBN: 978-0-471-47846-1 Paperback 800 pages February 2008
eller
Robert F. Pierret: Semiconductor Device Fundamentals
Prentice Hall (1996)
Examination
Project and home assignment hand-ins, MOSFET laboratory, and written examination.